hybrid-bonding bond pitch (vs ~40–50 µm microbump), heading sub-micron — the density behind SoIC 3D stacking
<10 µmobserved
| Value kind | observed — Reported measurements, counts, and specifications keep the precision and scope stated by their source; an exact specification is not treated as a range. |
|---|---|
| As of | 2026 |
| Source | UCIe Consortium; Synopsys; TSMC SoIC · Interconnect comparison table; copper-to-copper hybrid bonding at ≤10 µm versus solder microbumps at 20–40 µm or larger |
| Review | checking…review by 2026-10-19 · standard cadence |
| Recorded changes | last 2026-07-21 · 2 revisions tracked |
| Claim id | hybrid-bonding-bond-pitch-vs-40-and-ndash-50 |
Where the guide uses it
← Full numbers register — every date-stamped figure in the guide, with revision history.