GaN · Gallium Nitride
A wide-bandgap power semiconductor that switches faster than silicon, giving smaller, more efficient converters. 650 V GaN FETs fit 800 VDC conversion stages and 800 VDC-to-12 V boards.
A wide-bandgap power semiconductor that switches faster than silicon, giving smaller, more efficient converters. 650 V GaN FETs fit 800 VDC conversion stages and 800 VDC-to-12 V boards.